Accession Number:

ADA324733

Title:

Engineered GaN Substrates.

Descriptive Note:

Progress rept. no. 2.

Corporate Author:

CBL CORP REDWOOD CITY CA

Personal Author(s):

Report Date:

1996-09-09

Pagination or Media Count:

9.0

Abstract:

This the second report of CBLs progress on its Phase 1 SBIR contract. During the first reporting period, CBL was focused on establishing a working company structure. This included hiring personnel, developing a business structure and detailing a research plan. In this period CBL has begun conducting GaN crystal growth and fundamental etching experiments. The goal of this SBIR funded project is to develop an in-situ etching technique for substrate removal however, while the process is in the design phase we have conducted ex-situ etching studies for post growth substrate removal. These results are discussed in this report.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE