Vapour Phase Growth of Thick Monocrystalline GaN Epitaxial Layers by Sandwich-Method.
Interim technical rept.,
EUROPEAN RESEARCH OFFICE LONDON (UNITED KINGDOM)
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Comparison studies of the crystal quality of SiC substrates grown by Lely method and sublimation sandwich method SSM was conducted. SSM-substrates was shown to have considerably promise for high quality GaN epilayers growth. Conditions of the surface treatment of the SiC substrates were optimized for GaN epilayers growth. The best results were reached on very close to 0001 Si-substrate surfaces etched by sublimation technique. Monocrystalline GaN layers was shown to may be grown on the SiC substrates without any buffer layer at temperatures 1150-1200 deg C. Very high growth rates of the GaN epilayers up to 1 mmh is possible. In result heteroepitaxial layers of the large area more than 10 sq. mm and thickness up to 200 microns were grown by SSM.