Accession Number:
ADA318507
Title:
InAsSb(P)-InAsSb-InAs Long Wavelength Lasers.
Descriptive Note:
Technical rept. Apr-Oct 96,
Corporate Author:
NORTHWESTERN UNIV EVANSTON IL
Personal Author(s):
Report Date:
1996-10-01
Pagination or Media Count:
104.0
Abstract:
We have grown InAsSbInAsSbP DH laser structures and InAsSbGaSb superlattices on InAs substrates. Our VIII ratio is between 40-100 for both the active and cladding layers, and the growth rate is 1.0 micrometerhr, which resulted in a mirror-like surface morphology. The x-ray FWHM is 46 arc s. for the InAsb layer and 79 arc s. for the InAsSbP layer. PL intensity is unchanging up to 200 K and remains strong up to room temperature. We have investigated the influences of growth conditions on the material parameters as well as examined the causes for non-radiative recombination, and have deduced that it mainly originates from the InAsSbInAsSbP heterointerfaces, though our material has demonstrated increased radiative efficiency at temperatures up to 200 K.
Descriptors:
Subject Categories:
- Inorganic Chemistry
- Lasers and Masers
- Physical Chemistry