Accession Number:

ADA318507

Title:

InAsSb(P)-InAsSb-InAs Long Wavelength Lasers.

Descriptive Note:

Technical rept. Apr-Oct 96,

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL

Report Date:

1996-10-01

Pagination or Media Count:

104.0

Abstract:

We have grown InAsSbInAsSbP DH laser structures and InAsSbGaSb superlattices on InAs substrates. Our VIII ratio is between 40-100 for both the active and cladding layers, and the growth rate is 1.0 micrometerhr, which resulted in a mirror-like surface morphology. The x-ray FWHM is 46 arc s. for the InAsb layer and 79 arc s. for the InAsSbP layer. PL intensity is unchanging up to 200 K and remains strong up to room temperature. We have investigated the influences of growth conditions on the material parameters as well as examined the causes for non-radiative recombination, and have deduced that it mainly originates from the InAsSbInAsSbP heterointerfaces, though our material has demonstrated increased radiative efficiency at temperatures up to 200 K.

Subject Categories:

  • Inorganic Chemistry
  • Lasers and Masers
  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE