Accession Number:

ADA318507

Title:

InAsSb(P)-InAsSb-InAs Long Wavelength Lasers.

Descriptive Note:

Technical rept. Apr-Oct 96,

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL

Personal Author(s):

• Razeghi, M.
• Xu, J.
• Kim, S.
• Wu, D.
• Erdtmann, M.

Report Date:

1996-10-01

Pagination or Media Count:

104.0

Abstract:

We have grown InAsSbInAsSbP DH laser structures and InAsSbGaSb superlattices on InAs substrates. Our VIII ratio is between 40-100 for both the active and cladding layers, and the growth rate is 1.0 micrometerhr, which resulted in a mirror-like surface morphology. The x-ray FWHM is 46 arc s. for the InAsb layer and 79 arc s. for the InAsSbP layer. PL intensity is unchanging up to 200 K and remains strong up to room temperature. We have investigated the influences of growth conditions on the material parameters as well as examined the causes for non-radiative recombination, and have deduced that it mainly originates from the InAsSbInAsSbP heterointerfaces, though our material has demonstrated increased radiative efficiency at temperatures up to 200 K.

Descriptors:

• *SUPERLATTICES
• *LASERS
• *PHOSPHIDES
• *LONG WAVELENGTHS
• *INDIUM COMPOUNDS
• RADIATION
• LAYERS
• PARAMETERS
• MATERIALS
• STRUCTURES
• CHEMICAL VAPOR DEPOSITION
• EPITAXIAL GROWTH
• SUBSTRATES
• ALLOYS
• ARSENIDES
• ARSENIC
• CLADDING
• ANTIMONIDES

Subject Categories:

• Inorganic Chemistry
• Lasers and Masers
• Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE