Study of Ultra-Low Resistivity Material for Monolithically Integrated Npn and Pnp AlGaAs/GaAs Heterojunction Bipolar Transistors.
RESEARCH TRIANGLE INST RESEARCH TRIANGLE PARK NC
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The initial scope of this program was to develop ultra-low-resistivity GaAs-based materials for application to Npn and Pnp AlGaAsGaAs heterojunction bipolar transistors HBTs. Due to early success in the program and to complement research and development activities at the U.S Army EPSD laboratory in Ft. Monmouth, NJ, the program scope was expanded to include photonic applications of HBTs including photodetector optical receivers and monolithic integration of PIN and HBT devices for high performance receivers.
- Electrical and Electronic Equipment
- Inorganic Chemistry
- Electrooptical and Optoelectronic Devices