Accession Number:

ADA318429

Title:

New Sources for Chemical Beam Epitaxy.

Descriptive Note:

Final rept. 1 Jan 91-31 May 96,

Corporate Author:

UTAH UNIV SALT LAKE CITY COLL OF ENGINEERING

Report Date:

1996-08-31

Pagination or Media Count:

12.0

Abstract:

During the course of this ARO-funded project, we were able to make significant advances in the fundamental understanding and growth of phosphorous P containing compounds including indium phosphide InP, gallium phosphide GaP, and gallium indium phosphide GaInP using four new P precursors TBP, BPE, TDMAP, and TBBDMAP. This work has resulted in 1 further development of safe and improved sources specifically for chemical beam epitaxy CBE 2 determination of growth mechanisms involving the new source materials and 3 significant improvements of the quality of phosphorous P-based compound materials grown by CBE while reducing human and environmental risks associated with the growth of these materials. The main objective of this research was to improve the quality of P-containing IIIV semiconductors grown by CBE using organometallic sources and to grow InP, GaP, and GaInP without thermally precracking the P source. Fundamental pyrolysis studies and the growth of InP, GaP, and GaInP using four alternative precursors TBP, BPE, TDMAP, and TBBDMAP was performed. The first reported growth of GaInP without precracking the phosphorous source, TDMAP, and the first reported growth of InP, GaP, and GaInP without precracking the phosphorous source, TBBDMAP were performed under this ARO-sponsored research.

Subject Categories:

  • Industrial Chemistry and Chemical Processing
  • Inorganic Chemistry
  • Organic Chemistry
  • Physical Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE