Accession Number:

ADA318382

Title:

Growth and Structure of MBE-Deposited Iridium Silicide.

Descriptive Note:

Final technical rept. 1 Apr 95-31 Mar 96,

Corporate Author:

ARIZONA RESEARCH LABS TUCSON

Personal Author(s):

Report Date:

1996-09-09

Pagination or Media Count:

6.0

Abstract:

We were able to form pure IrSi3 films temperatures as low as 450 deg C, which is almost 200 deg C lower than previously reported. With our MBE growth techniques we also found a previously-unreported c-axis epitaxial IrSi3 growth mode at 700 deg C, found that the IrSi3 epitaxy on Si 111 was dominated by a Mode B orientation which had not previously been reported in the literature, as well as showed that the epitaxial growth of IrSi3 on Si111 was superior to that on Si100.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE