Growth and Structure of MBE-Deposited Iridium Silicide.
Final technical rept. 1 Apr 95-31 Mar 96,
ARIZONA RESEARCH LABS TUCSON
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We were able to form pure IrSi3 films temperatures as low as 450 deg C, which is almost 200 deg C lower than previously reported. With our MBE growth techniques we also found a previously-unreported c-axis epitaxial IrSi3 growth mode at 700 deg C, found that the IrSi3 epitaxy on Si 111 was dominated by a Mode B orientation which had not previously been reported in the literature, as well as showed that the epitaxial growth of IrSi3 on Si111 was superior to that on Si100.
- Inorganic Chemistry
- Physical Chemistry