Optoelectronic MQW Devices and Systems for Application in Optically Controlled Millimeter-Wave Oscillators.
Final technical rept. May 92-Dec 95,
MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
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The objective of this program was the realization of optically controlled millimeter wave and microwave GaAs and InP based circuits. The primary goal was the development of heterojunction bipolar transistors HBTs with the ability to be controlled optically. Of particular interest is the ability to convert a microwave signal modulated onto an optical carrier into an electrical signal which in turn will be used to injection lock a microwave oscillator. This optically injection locked oscillator has application to optically implemented control of phased array antenna systems. This report documents significant device developments such as a high frequency, discrete device for injection locking lnP based MODFET with fmax approx. 300 GHz GaAs based HBTs with fmax approx. 90GHz lnP based HBTs with fmax approx. 110 GHz, an Indium-Tin-Oxide ITO transparent ohmic contact technology, a high speed Barrier Reservoir and Quantum Well Electron Transport BRAQWET modulator 17 GHz bandwidth in GaAs based devices, and monolithically integrated oscillator circuits with guided wave optical injection with tuning range of 100 MHz injection locked at 14 GHz
- Electrooptical and Optoelectronic Devices