Accession Number:

ADA317122

Title:

Scanning Tunneling Microscopy and Spectroscopy of Bonding Mechanisms between Advanced Ceramics and Thin Metal Films.

Descriptive Note:

Final rept. 10 Mar 92-9 Mar 96,

Corporate Author:

ARIZONA STATE UNIV TEMPE

Personal Author(s):

Report Date:

1996-08-28

Pagination or Media Count:

8.0

Abstract:

The technological impact of silicon carbide, SiC, covers two distinctly diverse areas a as a high-strength structural ceramic, and b as a high-temperature wide bandgap semiconductor. In both of these applications, metallization of the SiC surface is a necessary and important procedure. From the structural point of view, a large complex shape can be produced by joining together parts of small size and simple geometries via a metallic interlayer. From the electronic point of view, good ohmic and Schottky contacts with metals are prerequisites for SiC-based device technology. For both cases, the TiSiC system appears to provide desirable results. When the TiSiC system is annealed in the temperature range 600- 1200 deg C, phases such as Ti5Si3, TiSi2, TiC and Ti3SiC2, are reportedly formed 1-6. Mechanically, these reaction products provide good bonding characteristics to yield a joint of adequate strength while electronically, the silicide and carbide phases are metallic and thus exhibit rectifying behavior as expected from Schottky barrier diodes.

Subject Categories:

  • Ceramics, Refractories and Glass
  • Inorganic Chemistry
  • Properties of Metals and Alloys
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE