Accession Number:
ADA317122
Title:
Scanning Tunneling Microscopy and Spectroscopy of Bonding Mechanisms between Advanced Ceramics and Thin Metal Films.
Descriptive Note:
Final rept. 10 Mar 92-9 Mar 96,
Corporate Author:
ARIZONA STATE UNIV TEMPE
Personal Author(s):
Report Date:
1996-08-28
Pagination or Media Count:
8.0
Abstract:
The technological impact of silicon carbide, SiC, covers two distinctly diverse areas a as a high-strength structural ceramic, and b as a high-temperature wide bandgap semiconductor. In both of these applications, metallization of the SiC surface is a necessary and important procedure. From the structural point of view, a large complex shape can be produced by joining together parts of small size and simple geometries via a metallic interlayer. From the electronic point of view, good ohmic and Schottky contacts with metals are prerequisites for SiC-based device technology. For both cases, the TiSiC system appears to provide desirable results. When the TiSiC system is annealed in the temperature range 600- 1200 deg C, phases such as Ti5Si3, TiSi2, TiC and Ti3SiC2, are reportedly formed 1-6. Mechanically, these reaction products provide good bonding characteristics to yield a joint of adequate strength while electronically, the silicide and carbide phases are metallic and thus exhibit rectifying behavior as expected from Schottky barrier diodes.
Descriptors:
- *METALS
- *SPECTROSCOPY
- *TUNNELING(ELECTRONICS)
- *ELECTRONIC SCANNERS
- *THIN FILMS
- *ELECTRON MICROSCOPY
- *CERAMIC MATERIALS
- *BONDING
- *TITANIUM
- *SILICON CARBIDES
- DIODES
- ELECTRONICS
- STRUCTURAL PROPERTIES
- HIGH TEMPERATURE
- SHAPE
- METAL FILMS
- ENERGY GAPS
- CARBIDES
- SEMICONDUCTORS
- PHASE
- BROADBAND
- PARTS
- SCHOTTKY BARRIER DEVICES
- SILICIDES
- REACTANTS(CHEMISTRY)
- ELECTRIC CONTACTS
Subject Categories:
- Ceramics, Refractories and Glass
- Inorganic Chemistry
- Properties of Metals and Alloys
- Atomic and Molecular Physics and Spectroscopy