Accession Number:

ADA317075

Title:

High Density Low Power RTD/HBT and RTD/HFET Technologies for High Speed Computing.

Descriptive Note:

Final rept. 15 Sep 93-30 Apr 96,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA SCIENCE CENTER

Personal Author(s):

Report Date:

1996-10-01

Pagination or Media Count:

66.0

Abstract:

This program is directed towards the monolithic integration of resonant tunneling diodes RTDs and conventional heterostructure transistors, and the demonstration of high speed, low power, high functional-density circuits. This effort was carried out in close collaboration with MIT Lincoln Laboratory LL. This team demonstrated lattice mismatched InGaAsAlAs RTDs with high peak to valley current ratio PVCR and high current density capability, integrated with AlGaAsGa-As-based heterojunction bipolar transistors HBTs and hetero-structure field effect transistors HFETs. We explored by simulation and experiment several novel digital integrated circuit approaches, based on this technology.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE