Accession Number:

ADA316439

Title:

Heteroepitaxy of Ternary SiGeC Alloys on Si for Bipolar Transistors.

Descriptive Note:

Final rept. 1 May 93-30 Apr 96,

Corporate Author:

ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE SCIENCE

Personal Author(s):

Report Date:

1996-07-31

Pagination or Media Count:

9.0

Abstract:

This project utilized a variety of experimental methods to produce thin films of SiGeC on Si for the purpose of creating a heteroepitaxial layer with a different energy bandgap on the substrate Si for applications to bipolar transistors. Growth was performed by combined ion and molecular beam deposition, by CVD and by C ion implantation. Up to 3 atomic percent C was successfully incorporated. Theoretical and experimental bandgaps decreased with increasing C content for up to 1.5 percent C.

Subject Categories:

  • Electrical and Electronic Equipment
  • Inorganic Chemistry
  • Physical Chemistry
  • Properties of Metals and Alloys
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE