Wavelength Tuning in Real-Time, In Situ Analysis of Thin Film Epitaxy.
Final rept. 7 Jun 95-6 Jun 96,
CORNELL UNIV ITHACA NY LAB OF ATOMIC AND SOLID STATE PHYSICS
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This project involves the acquisition and fabrication of instrumentation which combines a broadly tunable all-solid state laser, based on the optical parametric oscillator OPO, with a photoelectron emission microscope PEEM. The femtosecond laser system provides output wavelengths in the range 750 - 850 nm, 990 - 1150 nm, 2300 - 5200 nm, and the second, third, and fourth harmonics. Thus a very broad range of wavelengths from the deep UV to the mid-IR is available 190 nm - 5200 nm. The OPO is homemade and is pumped by a Tisapphire laser. The PEEM spectrometer is also homemade and is coupled directly to the laser system for two-photon photoemission experiments. The broad wavelength tunability of the laser system is also being applied to resonant second harmonic generation and sum frequency generation experiments. The ultrashort time duration of the laser pulses 60 - 90 fs can be used to follow time-dependent processes. The instruments are designed to provide real-time, in situ analysis of thin film epitaxy, especially the wide band gap semiconductors GaN, AIN, and SiC.
- Lasers and Masers
- Solid State Physics