Accession Number:

ADA315346

Title:

Growth, Characterization and Device Development in Monocrystalline Diamond Films.

Descriptive Note:

Quarterly technical rept. 1 Jul-30 Sep 96,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Report Date:

1996-09-30

Pagination or Media Count:

17.0

Abstract:

NitrogenN-doped diamondC thin films were grown on Si100 substrates using NC gas ratios from 0 to 11, microwave plasma CVD and a three-step growth process involving biased enhanced nucleation BEN. Micro-Raman spectra indicated that the film quality degraded with increasing N. The PL luminescence intensity increased with higher NC ratios. UPS spectra indicated that thin N-doped films with NC 15 exhibited an NEA surface. Field emission energy distribution FEED measurements were performed on diamond-coated Mo tips under ultra high vacuum conditions to investigate the origin of field emitted electrons. Mo emitters were prepared by electrochemical etching and were subsequently coated with diamond powder by a dielectrophoretic procedure. Field emission energy spectra were taken on the same samples before and after diamond coating. In vacuo thermal annealing of coated samples was essential to obtain stable field emission. Field emission energy distribution data indicate that the field emission current originated from the diamondvacuum interface, and that electrons were emitted from the conduction band minimum of diamond.

Subject Categories:

  • Crystallography
  • Plasma Physics and Magnetohydrodynamics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE