Accession Number:

ADA315160

Title:

Power Recovery of Radiation Damaged MOCVD Grown Indium Phosphide on Silicon Solar Cells Through Argon-Ion Laser Annealing.

Descriptive Note:

Master's thesis,

Corporate Author:

NAVAL POSTGRADUATE SCHOOL MONTEREY CA

Personal Author(s):

Report Date:

1996-06-01

Pagination or Media Count:

149.0

Abstract:

This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide on silicon MOCVD grown solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a large forward-biased current. The InPSi cells were irradiated with 1 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate four cells with an irradiance of 2.5 Wsq cm, producing a current density 3 to 5 times larger than AMO conditions. Cells were annealed at 19 deg C with the laser and at 25 deg C under AMO conditions. Annealing under laser illumination of np-type cells resulted in recovery of 48. Pn type cells lost 4 to 12 of the assumed degradaton. Annealing under AMO conditions resulted in power recovery of 70 in np type cells. Pn-type cells recovered approximately 16 of lost power. Results indicate that significant power recovery results from the annealing of defects within np type InPSi solar cells.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Lasers and Masers
  • Electric Power Production and Distribution

Distribution Statement:

APPROVED FOR PUBLIC RELEASE