Accession Number:

ADA314191

Title:

Limited Reaction Processing: Heterostructure and Novel Device Fabrication.

Descriptive Note:

Final rept. 1 Jun 91-31 May 96,

Corporate Author:

STANFORD UNIV CA BOARD OF TRUSTEES

Personal Author(s):

Report Date:

1996-06-03

Pagination or Media Count:

19.0

Abstract:

The primary motivation of this work has been to investigate the growth, fabrication, and device physics of Silicon-based Heterostructure Devices. The goal is to extend performance limitations of existing devices and to develop silicon-based heterojunction technology for the fabrication of new types of transistors e.g. quantum devices. The basic device structures investigated in this work are the SiSiGe Heterojunction Bipolar Transistor HBT and the Strained-Si n-MOSFET. Epitaxial layers are grown by the rapid thermal, low pressure chemical vapor deposition technique known as limited reaction processing. The research involves materials characterization and semiconductor processing, with an emphasis on obtaining a fundamental understanding of electronic properties and device physics. The specific problems studied in this research include characterizing minority carrier transport and heavy doping effects in SiSiGeSi HBTs, investigation of boron diffusion in SiGe, fabrication and analysis of the first high mobility, strained-Si MOSFETs, and preliminary study of the feasibility of adding carbon to SiGe layers to expand the opportunities for Column IV heterostructures. The HBT research was carried out in collaboration with Hewlett-Packard Palo Alto, CA, and Motorola Mesa, AZ has maintained a strong interest in our work on the strained-Si MOSFET.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE