Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.
ARMY RESEARCH LAB FORT MONMOUTH NJ
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Magnetron reactive ion etching of GaAs and AlGaAs has been investigated in CH4H2Ar gas mixtures. Etch rate was determined as a function of gas composition, power density 0.4-1.0Wcm2, pressure 6-25 mTorr, and total flow rate 20-40 sccm. Hydrogen passivation effects of etched and rapid thermal annealed GaAs were studied for several anneal temperatures 3000C, 4000C.
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