Accession Number:

ADA310955

Title:

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY RESEARCH LAB FORT MONMOUTH NJ

Report Date:

1996-05-01

Pagination or Media Count:

15.0

Abstract:

Magnetron reactive ion etching of GaAs and AlGaAs has been investigated in CH4H2Ar gas mixtures. Etch rate was determined as a function of gas composition, power density 0.4-1.0Wcm2, pressure 6-25 mTorr, and total flow rate 20-40 sccm. Hydrogen passivation effects of etched and rapid thermal annealed GaAs were studied for several anneal temperatures 3000C, 4000C.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE