Accession Number:

ADA310876

Title:

Electrical Characterization of GaSb Based Semiconductors for 2-4 micrometers Diode Laser Applications

Descriptive Note:

Doctoral thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1996-06-01

Pagination or Media Count:

263.0

Abstract:

Deep Level Transient Spectroscopy DLTS was used to characterize the band offsets and deep levels in MBE grown GaSb-based semiconductors that are used in 2-4 micrometers laser diode structures. One of several deep level traps found in AlxGa1-xAsySb1-y x0, 0.5, 0.6, 1.0 is a GaSb double acceptor trap. Progress is also made in establishing the model for the DX center in this material. The degree of compensation of the donor related DX center by GaSb affect where donors are situated, giving preference to one configuration over the many other possible configurations. One minority trap 320 meV below the conduction band, and six hole traps 24, 76, 108, 122, 224, and 276 meV above the valence band were found in the Ga0.85In0.15As0.12Sb0.88 using DLTS measurements. It is believed that the minority trap level at 320 meV and the hole trap level at 276 meV originate from the same trap, making it the most efficient non-radiative recombination center. Extrapolating a series of quantum well emission energies measured by DLTS based on Boltzmanns approximation to a point where the approximation is valid, results in a valence band offset of 0.52 eV between Ga0.81In0.19As0.12Sb0.88 and Al09Ga0.1AsSb lattice matched to GaSb.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Lasers and Masers
  • Crystallography
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE