Intersubband Quantum Cascade Infrared Laser Development. Phase 1.
Final rept. Jun 95-Jul 96,
QUANTUM EPITAXIAL DESIGNS INC BETHLEHEM PA
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The objectives of this program were threefold to reproduce the quantum cascade laser results from Bell Labs in a production environment, to demonstrate the quantum cascade laser at longer wavelengths, and to extend the technology to the GaAsAlGaAs material system in order to make the lasers easier to produce. After characterization with 5-crystal x-ray diffraction and photoluminescence to verify the material quality three laser wafers, with anticipated operating wavelengths near 4.5 microns and 8.5 microns, were grown, processed, and tested for this program. Although we were able to successfully grow the very thick lattice matched layers necessary for these devices, no lasing or electroluminescence was observed from any of the samples. Another laser design was produced based on the reported quantum cascade laser structures, but utilizing GaAs and AlGaAs materials instead of InGaAs and InAlAs however, because of the negative results with the InGaAsInAlAs structure and additional design uncertainties for the AlGaAs materials, this structure was not grown. This report will discuss in detail the work that was performed on the contract, possible cause for the negative results, and conclusions drawn from the work.
- Lasers and Masers