Accession Number:

ADA310635

Title:

Visible Light Emitting Materials and Injection Devices.

Descriptive Note:

Quarterly progress rept. 1 Mar-31 May 96,

Corporate Author:

FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

1996-05-31

Pagination or Media Count:

54.0

Abstract:

Progress in report on research into ZnSe-based and GaN-based materials and devices for light emitting diodes and diode lasers at blue-green visible wavelengths. II-VI Work. Our recent activities in the II-VI area have focused on stacking fault density reduction in ZnSe epilayers and the attached manuscript see Appendix 1, which has been submitted to Applied Physics Letters 41896, summarizes our recent results. This work is also supported in part by the II-VI Consortium. Further optimization of deposition parameters tor tne growth of cubic-GaN on MgO has resulted in the production of higher quality material as evidenced by the low-temperature PL spectrum shown in Fig. 1.1. As can be seen from the spectrum, a relatively sharp peak is dominant at 3.28 eV at 21.5K. p1 and p4

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Atomic and Molecular Physics and Spectroscopy
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE