Influence of Surface Defects on Chlorine Chemisorption on Si(100)-(2 x 1).
PITTSBURGH UNIV PA DEPT OF CHEMISTRY
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The influence on chlorine chemisorption of surface defects created by low fluence Ar sputtering of the Si100-2x1 surface has been studied. A distinctly different type of Cl bonding is observed on defect sites compared to Cl bonding on Si-Si dimers, as judged by electron stimulated desorption ion angular distribution ESDIAD measurements. On the ordered Si100 surface only terminally bonded Si-Cl species are observed producing four off-normal Cl beams on the disordered Si100 surface an additional Cl beam emitted in the normal direction is present at 120K. This Cl beam is interpreted as a bridge bonded Cl species chemisorbed inside of the dimer vacancy defects. In SiCl2 thermal desorption a new low temperature desorption channel is observed on disordered Si100 surfaces indicating that defect sites enhance the rate of surface etching. In the range of Ar fluences studied 0.2-5 monolayer the Cl saturation coverage increases by as much as 30 over that observed on non-defective Si100-2x1.
- Inorganic Chemistry
- Physical Chemistry
- Polymer Chemistry
- Atomic and Molecular Physics and Spectroscopy