Accession Number:

ADA310552

Title:

Influence of Surface Defects on Chlorine Chemisorption on Si(100)-(2 x 1).

Descriptive Note:

Technical rept.,

Corporate Author:

PITTSBURGH UNIV PA DEPT OF CHEMISTRY

Report Date:

1996-06-12

Pagination or Media Count:

30.0

Abstract:

The influence on chlorine chemisorption of surface defects created by low fluence Ar sputtering of the Si100-2x1 surface has been studied. A distinctly different type of Cl bonding is observed on defect sites compared to Cl bonding on Si-Si dimers, as judged by electron stimulated desorption ion angular distribution ESDIAD measurements. On the ordered Si100 surface only terminally bonded Si-Cl species are observed producing four off-normal Cl beams on the disordered Si100 surface an additional Cl beam emitted in the normal direction is present at 120K. This Cl beam is interpreted as a bridge bonded Cl species chemisorbed inside of the dimer vacancy defects. In SiCl2 thermal desorption a new low temperature desorption channel is observed on disordered Si100 surfaces indicating that defect sites enhance the rate of surface etching. In the range of Ar fluences studied 0.2-5 monolayer the Cl saturation coverage increases by as much as 30 over that observed on non-defective Si100-2x1.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Polymer Chemistry
  • Crystallography
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE