Investigation of Radiation Effects in Microelectronics.
Technical rept. 8 May 92-7 Nov 95,
ARIZONA UNIV TUCSON DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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Electronic components implemented in space borne and military applications are often required to operate in a hostile radiation environment, and are therefore subject to the degradation and failure mechanisms associated with such environments. This report discusses radiation effects research in the areas of 1 single event burnout of power MOSFETs 2 single event gate rupture of power MOSFETs 3 total dose degradation of power MOSFETs including mobility degradation, cryogenic operation, 1f noise, and termination structures and 4 total-dose gain degradation of bipolar junction transistors. Experiment details and modeling and simulation results are given in these areas. This work is intended to 1 facilitate selection of appropriate components for radiation environments 2 provide design techniques to improve the radiation hardness of power MOSFETs and bipolar junction transistors and 3 advance the technical base with new physical insights in radiation effects in microelectronics.
- Nuclear Radiation Shielding, Protection and Safety