Accession Number:

ADA310337

Title:

Investigation of Radiation Effects in Microelectronics.

Descriptive Note:

Technical rept. 8 May 92-7 Nov 95,

Corporate Author:

ARIZONA UNIV TUCSON DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Report Date:

1996-06-01

Pagination or Media Count:

320.0

Abstract:

Electronic components implemented in space borne and military applications are often required to operate in a hostile radiation environment, and are therefore subject to the degradation and failure mechanisms associated with such environments. This report discusses radiation effects research in the areas of 1 single event burnout of power MOSFETs 2 single event gate rupture of power MOSFETs 3 total dose degradation of power MOSFETs including mobility degradation, cryogenic operation, 1f noise, and termination structures and 4 total-dose gain degradation of bipolar junction transistors. Experiment details and modeling and simulation results are given in these areas. This work is intended to 1 facilitate selection of appropriate components for radiation environments 2 provide design techniques to improve the radiation hardness of power MOSFETs and bipolar junction transistors and 3 advance the technical base with new physical insights in radiation effects in microelectronics.

Subject Categories:

  • Nuclear Radiation Shielding, Protection and Safety

Distribution Statement:

APPROVED FOR PUBLIC RELEASE