Accession Number:

ADA310311

Title:

Optoelectronics Research Center.

Descriptive Note:

Final technical rept. 1 Jul 92-31 Jan 96,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE

Personal Author(s):

Report Date:

1996-06-12

Pagination or Media Count:

7.0

Abstract:

The AFOSR Optoelectronics Research Center at the University of New Mexico has continued its aggressive, broadly ranging program. Novel InGaAs and AlGaAs device structures such as resonant-periodic-gain surface-emitting lasers and high-power, coherent unstable resonator wide-stripe lasers have been pioneered. Processing advances have included investigation of III-V regrowth over patterned wafers allowing unique device structures such as unstable laser arrays, and the extension of interferometric lithography techniques has led to the definition of Si quantum wire and dot structures. Process technology improvements such as GaS passivation have extended the catastrophic optical breakdown limits of GaAs lasers. External cavity operation of diode lasers has provided information on internal device physics and on the fundamental limits of laser characteristics. Self-consistent thermal, electrical and optical modeling of both single-element and array geometries has led to improved device performance. A major advance is the coupling of phototransistors with surface-emitting lasers to make smart pixels. Data rates for HBTVCSEL switches as fast as 500 Mbs have been demonstrated. Upconversion fiber lasers have been developed for the green Er-doped ZBLAN and blue Tm-doped ZBLAN. Confocal photoluminescence spectroscopy has been developed as a simple, sub-micrometer spatial resolution tool for the study of regrown structures.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Inorganic Chemistry
  • Lasers and Masers
  • Atomic and Molecular Physics and Spectroscopy
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE