Accession Number:

ADA305925

Title:

Optical Characterization of Indium Arsenide Antimonide Semiconductors Grown by Molecular Beam Epitaxy

Descriptive Note:

Master's thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1995-09-01

Pagination or Media Count:

264.0

Abstract:

The material parameters and crystalline quality of undoped, MBE-grown InAs1-xSbx nearly lattice-matched to 100 GaSb -0.617 less than or equal delta aa less than or equal 0.708 similar to material used for mid-infrared semiconductor lasers were determined by optical characterization. Absorption measurements at temperatures between 6-295 K determined the energy gap and wavelength-dependent absorption coefficient for each sample. The compositional dependence of the energy gap was anomalous when compared to previously reported data, suggesting phase separation existed in the material. The samples were also studied by temperature- and excitation-dependent photoluminescence PL, which, for the majority of cases, showed only a single band-edge peak, identified by comparison with the absorption data. PL linewidths as narrow as 4.3 meV and LO-phonon replicas indicated high material quality, but the shift of the PL peak to higher energies with increased excitation was greater than expected from band filling alone, and underscored the likelihood of phase separation. Extrinsic PL peaks were also observed from one undoped sample, and identified a F-B transition at 4-7 meV and a DAP transition at 10-14 meV below the band edge. Characterization of InAs1-xSbxBe identified the Be acceptor energy as 30 meV above the valence band. jg p263

Subject Categories:

  • Inorganic Chemistry
  • Electrooptical and Optoelectronic Devices
  • Crystallography
  • Atomic and Molecular Physics and Spectroscopy
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE