Accession Number:

ADA305923

Title:

Binary Gas Mixture Analysis with an Interdigitated Gate Electrode Field Effect Transistor (IGEFET) Microsensor.

Descriptive Note:

Doctoral thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1995-12-01

Pagination or Media Count:

606.0

Abstract:

Single component and binary gas mixtures of nitrogen dioxide NO2 and ammonia NH3 were analyzed with a microsensor composed of an array of interdigitated Gate Electrode Field Effect Transistor IGEFET sensor elements coated with copper-, nickel-, and cobalt-phthalocyanine thin films. Improvements in the IGEFET microsensor design and operation facilitated simultaneous measurement of ihe direct current DC and alternating current AC electrical response of the metal-substituted phthalocyanine MPc films to challenge gas exposure. A finite-difference model of the interdigitated gate electrode IGE structure confirmed the fundamental operation of the IGEFET microsensor. Principal component analysis PCA and multilinear regression were applied to features identified in the IGE structures normalized DC resistance response, as well as the IGEFET transfer functions gain and phase response, to gas mixtures containing parts-per-billion ppb NO2 and parts-per-million ppm NH3. The predicted concentrations were generally within 50 of the known concentrations for all gas analyses. The single component analysis of each test gas using the normalized DC resistance data yielded the smallest error 14 for NH3 and 26 for NO2. For the binary gas mixture analysis, the smallest error was achieved with the gain response data approximately 25 for each component. jg p63

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE