Accession Number:

ADA305714

Title:

High Temperature Heterojunction Transistors with High Gain and Wide Bandwidth.

Descriptive Note:

Final rept. 1 Aug 95-13 Feb 96,

Corporate Author:

NZ APPLIED TECHNOLOGIES WOBURN MA

Personal Author(s):

Report Date:

1996-02-13

Pagination or Media Count:

30.0

Abstract:

NZ Applied Technologies has developed the first set of materials deposition conditions for creating epitaxial thin films of the stoichiometric ternary nitride compound Zn0.5Ge0.5N, a new wide bandgap material appropriate for introduction into a wide variety of electronic and optoelectronic devices. Applications include blue light-emitting diodes, blue laser diodes, heterostructure transistors for high temperature operation, dielectric mirrors for wavelength filtering, and cold cathodes for field emission displays and high performance microwave vacuum tubes. With a direct bandgap in the blue region of the spectrum, Zn0.5Ge0.5N can simply be used to fabricate light-emitting and laser diodes, while alloys with Zn0.5Si0.5N can provide ultraviolet light emission. A heterojunction transistor structure will rely on gallium nitride GaN or aluminum gallium nitride AlGaN as the second member of the junction pair ternary nitrides are excellent candidate for serving as transistor bases or channels since they have smaller bandgaps than corresponding binaries while being very closely lattice matched, insuring high gain and high speed operation. Zn0.5Ge0.5N can also serve as the charge storage reservoir for a cold cathode structure based on the negative electron affinity of AlN. jg p4

Subject Categories:

  • Electrical and Electronic Equipment
  • Inorganic Chemistry
  • Electricity and Magnetism
  • Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE