Accession Number:

ADA305644

Title:

Use of Electroreflectance to Characterize Materials with a View to Predict Device Performance.

Descriptive Note:

Final rept. 1 Sep 89-31 Aug 93,

Corporate Author:

ILLINOIS UNIV AT CHICAGO CIRCLE DEPT OF PHYSICS

Personal Author(s):

Report Date:

1996-02-27

Pagination or Media Count:

24.0

Abstract:

The work performed under this contract was centered on the optical characterization of semiconductor heterojunctions, multiple-layered structures and heavily doped. This concentration on semiconductor structures of great importance for device applications was began in the second half of our previous contracts. Because of the shift from the measurement of optical data around the E1 and E1A1 critical points of bulk materials or optically thick films to the measurement of data around E0 and E0A0 on complex structures, entirely new theoretical approaches and computer programs were required for the analysis of the data. Four new approaches to the data were developed, one of which involved a new basic theory. This work enabled us to determine from electroreflectance data the detailed band profile of ZnSeGaAs heterojunctions, including the band offset and the magnitude and range of the ZnGa inter-diffusion. Another major accomplishment was the accurate measurement of the band offset of Ga AsGahiP quantum wells and superlattices, which involved the observation and identification of 29 different optical transitions. A new experimental technique, vacuum electroreflectance, was used to study high-doped GaAs, which resulted in a new theory of photoreflectance and contactless electroreflectance. This contract resulted in 22 publications including 6 Ph.D. theses. AN

Subject Categories:

  • Electrical and Electronic Equipment
  • Quantum Theory and Relativity
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE