Optoelectronic Applications of Wide-Band Gap II-VI Semiconductors.
Final rept. 1 Jul 94-30 Jun 95,
NORTH CAROLINA STATE UNIV AT RALEIGH
Pagination or Media Count:
A continued study to demonstrate the viability of growth of LED and laser diode structures on ZnSe substrates as compared with heteroepitaxial growth of II-VI structures on GaAs substrates. Other key issues that were to be addressed included p-type doping of ZnSe using nitrogen plasma sources and the ohmic contact problem for p-type ZnSe. jg p1
- Electrical and Electronic Equipment
- Inorganic Chemistry
- Lasers and Masers