Accession Number:

ADA303997

Title:

Optoelectronic Applications of Wide-Band Gap II-VI Semiconductors.

Descriptive Note:

Final rept. 1 Jul 94-30 Jun 95,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Personal Author(s):

Report Date:

1996-01-24

Pagination or Media Count:

17.0

Abstract:

A continued study to demonstrate the viability of growth of LED and laser diode structures on ZnSe substrates as compared with heteroepitaxial growth of II-VI structures on GaAs substrates. Other key issues that were to be addressed included p-type doping of ZnSe using nitrogen plasma sources and the ohmic contact problem for p-type ZnSe. jg p1

Subject Categories:

  • Electrical and Electronic Equipment
  • Inorganic Chemistry
  • Lasers and Masers
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE