Accession Number:

ADA303893

Title:

Materials and Device Research for High-Speed Integrated Optoelectronic Transmitters Using Vertical-Cavity Surface-Emitting Lasers.

Descriptive Note:

Final rept. 1991-19 Nov 95,

Corporate Author:

TEXAS UNIV AT AUSTIN MICROELECTRONICS RESEARCH CENTER

Personal Author(s):

Report Date:

1996-01-18

Pagination or Media Count:

33.0

Abstract:

This research was conducted in order to investigate and realize the monolithic integration of an InGaAsPInP surface emitting LED Double Heterojunction Light Emitting Diode DH with an entire process of the research design, growth, fabrication, characterization, and result analysis. The highlighted features of the system are its monolithic integration, surface emitting optical device design LED in this case, and lateral, rather than a vertical, coupling of the LED and the HBT. The InGaAsP quaternary active layer of the LED is designed to operate at lambda 1.55 micrometers, which coincides with the lowest dispersion wavelength of silica optical fibers. Such an integrated structure is a prototype of an LED optical transmitter, which can be widely used in telecommunication and control applications. jg

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Organic Chemistry
  • Physical Chemistry
  • Lasers and Masers
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE