InGaAsP Diode Laser for Nd:YAG Pumping.
Final rept. Mar 93-Dec 95,
NORTHWESTERN UNIV EVANSTON IL
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The main objective of this contract under ARPAUS Army 1DAAH-04-93-G-0044 is to develop and demonstrate 0.8 micrometer high power laser based on InGaAsP material system for pumping of NdYAG lasers. In order to achieve this goal there are three major considerations 1 growth and fabrication of GaInAsPGaAs heterostructures lasers, 2 packaging and device testing, and 3 the reliability assessments of these structures. This report summarizes the results of experimental research work that the Center for Quantum Devices have accomplished under this contract. jg p6
- Lasers and Masers
- Inorganic Chemistry
- Quantum Theory and Relativity