Accession Number:

ADA303876

Title:

InGaAsP Diode Laser for Nd:YAG Pumping.

Descriptive Note:

Final rept. Mar 93-Dec 95,

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL

Personal Author(s):

Report Date:

1996-01-01

Pagination or Media Count:

235.0

Abstract:

The main objective of this contract under ARPAUS Army 1DAAH-04-93-G-0044 is to develop and demonstrate 0.8 micrometer high power laser based on InGaAsP material system for pumping of NdYAG lasers. In order to achieve this goal there are three major considerations 1 growth and fabrication of GaInAsPGaAs heterostructures lasers, 2 packaging and device testing, and 3 the reliability assessments of these structures. This report summarizes the results of experimental research work that the Center for Quantum Devices have accomplished under this contract. jg p6

Subject Categories:

  • Lasers and Masers
  • Inorganic Chemistry
  • Optics
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE