Accession Number:

ADA303289

Title:

Photoluminescence and Electroluminescence of Erbium and Neodymium Implanted Semiconductors.

Descriptive Note:

Master's thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH

Personal Author(s):

Report Date:

1995-12-01

Pagination or Media Count:

75.0

Abstract:

Low temperature photoluminescence PL and electroluminescence EL measurements were used to study the excitation of erbium- and neodymium-implanted GaAs and AlxGa1-xAs x0. 1, 0.3 pn-junctions. The rare-earth RE emissions were investigated as a function of ion dose, aluminum mole fraction, laser excitation power, and applied forward bias voltage for the implanted samples. Low temperature PL was also measured from Er doped silicon grown by the metalorganic chemical vapor-phase deposition MOCVD method using various growth parameters.. The MOCVD-grown Si samples were studied as a function of metalorganic source temperature, silane SiH4 flow, growth time, and hydrogen presence during growth. jg p10

Subject Categories:

  • Inorganic Chemistry
  • Lasers and Masers
  • Electricity and Magnetism
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE