High Power, High Efficiency MESFETs and HEMTs.
Final rept. 15 Jun 92-14 Jun 95,
CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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For the duration of the project dated above, the work on the AASERT program concentrated on improving the power performance of GaAs MESFETs with LTG GaAs surface passivation layers by studying the effects of source and drain contacts regrown by MOCVD on both device breakdown and gain.
- Solid State Physics