Accession Number:

ADA301934

Title:

Silicon-Germanium-Carbon Alloys for Optoelectronic Devices (FY91 AASERT).

Descriptive Note:

Final rept. 1 Jun 92-31 May 95,

Corporate Author:

DELAWARE UNIV NEWARK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1995-05-31

Pagination or Media Count:

132.0

Abstract:

This research resulted the growth on the growth of this new semiconductor alloys, silicon-germanium carbon, by the technique of molecular beam epitaxy MBE. The alloys have been characterized by several techniques including Rutherford backscattering spectronietry RBS for composition, and Fourier transform infrared spectrometry FTIR for optical absorption. The SiGeC alloys were successfully grown using all solid sources for the Si, Ge and C. Substrates were 75 mm diameter 100 - oriented Si wafers, and alloy layer thicknesses ranged from 10 nm to 3 m.

Subject Categories:

  • Metallurgy and Metallography
  • Electrical and Electronic Equipment
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE