High Speed Heterostructure Transistors.
Final rept. 1 Jun 92-31 May 95,
ILLINOIS UNIV AT URBANA
Pagination or Media Count:
The growth and characterization of the 111-V nitrides has been the focus of intense effort. A major problem plaguing nitride growth has been the absence of a good substrate to grow on. Currently sapphire and 6H-SiC are the substrates of choice for nitride growth with approximately equal results, although growth on sapphire yields slightly better results. We have addressed this problem in a fundamental and innovative way and given fresh insight into the considerations that must guide subsequent substrate development.
- Solid State Physics