Accession Number:

ADA301117

Title:

High Speed Heterostructure Transistors.

Descriptive Note:

Final rept. 1 Jun 92-31 May 95,

Corporate Author:

ILLINOIS UNIV AT URBANA

Personal Author(s):

Report Date:

1995-05-31

Pagination or Media Count:

2.0

Abstract:

The growth and characterization of the 111-V nitrides has been the focus of intense effort. A major problem plaguing nitride growth has been the absence of a good substrate to grow on. Currently sapphire and 6H-SiC are the substrates of choice for nitride growth with approximately equal results, although growth on sapphire yields slightly better results. We have addressed this problem in a fundamental and innovative way and given fresh insight into the considerations that must guide subsequent substrate development.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE