Complementary 2-D MESFET for Low Power Electronics. Phase 1.
Final rept. 2 May-1 Nov 95,
ADVANCED DEVICE TECHNOLOGIES INC CHARLOTTESVILLE VA
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The purpose of this project was to determine the feasibility of developing a p-channel 2-D MESFET for future low power complementary IC technologies. The project demonstrated the fabrication of prototype p-channel 2-D MESFETs having promising electrical characteristics, developed a p-channel 2-D MESFET device model which was implemented into a commercially available SPICE program, demonstrated the SPICE simulation of p-channel 2-D MESFET device characteristics as well as complementary 2-D MESFET circuits, and demonstrated that the complementary 2-D MESFET should have significantly lower power-delay product compared with existing technologies. Finally, the project evaluated the manufacturability and technology insertion issues of the new technology. jg p.1
- Electrical and Electronic Equipment
- Inorganic Chemistry
- Electricity and Magnetism