Accession Number:

ADA301088

Title:

Complementary 2-D MESFET for Low Power Electronics. Phase 1.

Descriptive Note:

Final rept. 2 May-1 Nov 95,

Corporate Author:

ADVANCED DEVICE TECHNOLOGIES INC CHARLOTTESVILLE VA

Personal Author(s):

Report Date:

1995-11-01

Pagination or Media Count:

12.0

Abstract:

The purpose of this project was to determine the feasibility of developing a p-channel 2-D MESFET for future low power complementary IC technologies. The project demonstrated the fabrication of prototype p-channel 2-D MESFETs having promising electrical characteristics, developed a p-channel 2-D MESFET device model which was implemented into a commercially available SPICE program, demonstrated the SPICE simulation of p-channel 2-D MESFET device characteristics as well as complementary 2-D MESFET circuits, and demonstrated that the complementary 2-D MESFET should have significantly lower power-delay product compared with existing technologies. Finally, the project evaluated the manufacturability and technology insertion issues of the new technology. jg p.1

Subject Categories:

  • Electrical and Electronic Equipment
  • Inorganic Chemistry
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE