Accession Number:

ADA300734

Title:

Epitaxial Growth of Diamond Films Using Low Energy C- Ion Beam Surface Modification.

Descriptive Note:

Progress rept.,

Corporate Author:

SKION CORP HOBOKEN NJ

Personal Author(s):

Report Date:

1995-02-12

Pagination or Media Count:

10.0

Abstract:

Proposes Performance Plan. Construct the C-ion source and MW plasma CVD system. Investigate the epitaxial growth processing technology by controlling the surface modification process and produce PE CVD. Characterize the optical and structural properties of the typical samples. Refine deposition process design. Final report. According to the above proposed performance plan, we were constructing the deposition system and C-ion source in a previous month. The proposed work will be performed in two independent systems 1 obtain C-ion beam parameters for the optimum surface configuration for epitaxial diamond nucleation in LEED installed UHV chamber, 2 epitaxial growth studies in ion beam CVD system where C- ion gun will pre-treat the sample surface according to the parameters obtained in UHV system and further growth will be performed by Microwave Plasma Enhanced CVD MWPE CVD process. jg p.2

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Laminates and Composite Materials
  • Atomic and Molecular Physics and Spectroscopy
  • Particle Accelerators

Distribution Statement:

APPROVED FOR PUBLIC RELEASE