Accession Number:

ADA300640

Title:

Multi-Scale Approach to Semiconductor Device Simulation.

Descriptive Note:

Final rept. 1992-1995,

Corporate Author:

ILLINOIS UNIV AT URBANA

Personal Author(s):

Report Date:

1995-01-01

Pagination or Media Count:

7.0

Abstract:

A brief summary of research accomplishments during the past three years is given, along with a list of 18 published papers that contain the details of this work. Also included is a list of invited presentations of ARO sponsored research. These accomplishments include essential completion of our full band Monte Carlo simulator with the first principles derivation of deformation potentials from the same ionic potentials used to calculate the crystal band-structure development of a powerful density functional based numerical method to calculate quantum capacitance in nanostructures including Coulomb, size-quantization and many-body contributions to the charging energy and establishment of an entirely new quantum Monte Carlo method based on Schroedingers equation for simulating dissipative quantum transport, a method that bridges the gap between phase-incoherent semiclassical transport and phase-coherent quantum transport.

Subject Categories:

  • Electrical and Electronic Equipment
  • Physical Chemistry
  • Crystallography
  • Electricity and Magnetism
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE