Accession Number:

ADA300376

Title:

Theory and Simulation of a Field Emission: Analysis and Incorporation into Macroscopic Device Characterization.

Descriptive Note:

Interim rept. Sep 94-Sep 95,

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

1995-10-12

Pagination or Media Count:

55.0

Abstract:

Field emitter array structures are under consideration as the gated electron source in inductive-output amplifiers currently being designed, due to the potential for spatio-temporal modulation at the cathode surface. Emission gating of electron beams places stringent demands on the cathode structures where modulation occurs. In spite of the intense interest generated by these structures, a simple analytical treatment of their properties has not been forthcoming. In this work, we present a simplified theory of a gated FEA triode geometry, describe a numerically intensive calculation of current-voltage characteristics and other properties, and describe a semi-numerical model that combines the features of both. The semi-numerical model is being developed as a more comprehensive device analysis tool to predict RF amplifier performance in determining FEA properties that best meet IOA objectives. AN

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE