AASERT In-Situ Growth Monitoring of Molecular Beam Epitaxy Processes.
Annual technical rept. 12 Sep 94-11 Sep 95,
ARIZONA STATE UNIV TEMPE DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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This is the first year technical report on the ARPAARO AASERT grant DAAH04-94-G-0363 titled I n-Situ Growth Monitoring of Molecular Beam Epitaxy Process. This grant augments the parent grant N00014-92-J-1931 This program addresses issues toward achieving real time control of III-V semiconductor epitaxial film. This program addresses issues toward achieving real time control of III-V semiconductor epitaxial film growth. Work on this project has resulted in many changes to the computer control of the MBE growth chamber. The first and most basic of changes was a total revision of the computer program used for thickness control during growth. The software has been totally redesigned on all levels including the user interface. The interface is more intuitive, easier to use, and drastically reduces data entry for multiple layers and so decreases the possibility of error. A second objective for the revised program is increased modularity and expandability to allow for addition of features and modification of existing features. The program was written using C in the Windows environment. The object oriented nature of the software has proved to be very effective in terms of modularity, expansion, and modification. Another of the objectives is increased robustness. This objective has been met in that the software has not been demonstrated to fail. jg p.2
- Atomic and Molecular Physics and Spectroscopy
- Inorganic Chemistry