Accession Number:

ADA300163

Title:

Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN, and SiC Thin Films.

Descriptive Note:

Quarterly technical rept. 1 Jul-30 Sep 95,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

1995-09-01

Pagination or Media Count:

35.0

Abstract:

At North Carolina State University, GaN films have been deposited on Al2O30001 substrates at 550 deg C using triethylgallium and NH3 seeded free jets. An NH3 to triethylgallium ratio of 151 yielded the best GaN films in this configuration. Experiments to determine the optimal skimmer locations have been performed in anticipation of the future employment of skimmed, differentially pumped beams. The assembly of a new deposition system supporting two skimmed and differentially pumped supersonic beams and associated in-situ characterization using reflection high energy electron diffraction and on-line x-ray photoelectron spectroscopy has made excellent progress. At Arizona State University, construction of a selected energy epitaxial deposition SEED apparatus is still in progress. The supersonic molecular beam source is under construction and the associated gas manifold has been completed. The UHV chambers for the dual Colutron ion-beam system have been completed and are being assembled. Deposition of AlN and GaN films using an effusive source and activated nitrogen species via microwave discharge has been conducted in a test chamber for the purpose of interfacing to the LEEM for in situ real-time observation of film growth. Various schemes of preparing the 6H-SiC000l substrates were explored and the resulting surfaces were studied by LEEDLEEM. Removal of the scratches on the SiC substrate surfaces remains a challenging problem.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Atomic and Molecular Physics and Spectroscopy
  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE