Accession Number:

ADA297555

Title:

Hydrogen Migration and Complex Formation in Technologically Important III-V and II-VI Semiconductors and Their Alloys.

Descriptive Note:

Final rept. 5 Sep 91-4 Sep 94,

Corporate Author:

XEROX PALO ALTO RESEARCH CENTER CA

Personal Author(s):

Report Date:

1995-04-01

Pagination or Media Count:

41.0

Abstract:

Experimental and theoretical studies were conducted to identify basic mechanisms and provide quantitative information on the properties of hydrogen in selected technologically-important III-V and II-VI semiconductors and their alloys. Hydrogen interactions with dopants and deep level defects were investigated in GaAs, AlGaAs, InGaAsAlGaAs quantum wells, GaP, GaN, and ZnSe.The diffusivity of H in GaAs was determined with a new capacitance transient technique, which provided the first direct quantitative determination of the diffusivity of hydrogen in any compound semiconductor. Vibrational mode spectroscopy identified the N-H complex in ZnSeN and the Zn-H complex in GaPZn. Hydrogenation of Mg-doped GaN produced acceptor passivation. New local vibrational modes were detected in MBE-grown, Mg-doped GaN. Computational studies were conducted on native defects in Ga N with the conclusion that, contrary to a wide-spread assumption, the nitrogen vacancy cannot be the source of the high n-type conductivity generally found in as-grown undoped GaN. Electronic defects were characterized in n-type GaN by deep level transient spectroscopy DLTS and optical-DLTS. Finally, in epitaxial ZnSe the effects of hydrogenation during gas-source e.g., H2Se MBE were found to be significantly enhanced when N was used as the acceptor dopant and resulted in highly resistive films, while Cl-doped n-type films were largely unaffected by the presence of hydrogen during growth. jg

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Properties of Metals and Alloys
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE