Accession Number:
ADA297555
Title:
Hydrogen Migration and Complex Formation in Technologically Important III-V and II-VI Semiconductors and Their Alloys.
Descriptive Note:
Final rept. 5 Sep 91-4 Sep 94,
Corporate Author:
XEROX PALO ALTO RESEARCH CENTER CA
Personal Author(s):
Report Date:
1995-04-01
Pagination or Media Count:
41.0
Abstract:
Experimental and theoretical studies were conducted to identify basic mechanisms and provide quantitative information on the properties of hydrogen in selected technologically-important III-V and II-VI semiconductors and their alloys. Hydrogen interactions with dopants and deep level defects were investigated in GaAs, AlGaAs, InGaAsAlGaAs quantum wells, GaP, GaN, and ZnSe.The diffusivity of H in GaAs was determined with a new capacitance transient technique, which provided the first direct quantitative determination of the diffusivity of hydrogen in any compound semiconductor. Vibrational mode spectroscopy identified the N-H complex in ZnSeN and the Zn-H complex in GaPZn. Hydrogenation of Mg-doped GaN produced acceptor passivation. New local vibrational modes were detected in MBE-grown, Mg-doped GaN. Computational studies were conducted on native defects in Ga N with the conclusion that, contrary to a wide-spread assumption, the nitrogen vacancy cannot be the source of the high n-type conductivity generally found in as-grown undoped GaN. Electronic defects were characterized in n-type GaN by deep level transient spectroscopy DLTS and optical-DLTS. Finally, in epitaxial ZnSe the effects of hydrogenation during gas-source e.g., H2Se MBE were found to be significantly enhanced when N was used as the acceptor dopant and resulted in highly resistive films, while Cl-doped n-type films were largely unaffected by the presence of hydrogen during growth. jg
Descriptors:
- *SEMICONDUCTORS
- *ALLOYS
- *HYDROGEN
- *GROUP III COMPOUNDS
- *MIGRATION
- *GROUP II VI COMPOUNDS
- TRANSIENTS
- ELECTRONICS
- MAGNESIUM
- EXPERIMENTAL DATA
- COMPUTATIONS
- HIGH RATE
- CONDUCTIVITY
- SPECTROSCOPY
- INTERACTIONS
- QUANTUM WELLS
- GALLIUM ARSENIDES
- ALUMINUM GALLIUM ARSENIDES
- EPITAXIAL GROWTH
- MOLECULAR BEAMS
- NITRIDES
- NITROGEN
- DEFECTS(MATERIALS)
- GROUP IV COMPOUNDS
- DOPING
- N TYPE SEMICONDUCTORS
- INDIUM PHOSPHIDES
- ELECTRON ACCEPTORS
- CHLORINE
- CAPACITANCE
- HYDROGENATION
- PASSIVITY
- GALLIUM PHOSPHIDES
- ZINC SELENIDES
- VIBRATIONAL SPECTRA
- GROUP VI COMPOUNDS
Subject Categories:
- Inorganic Chemistry
- Physical Chemistry
- Electrical and Electronic Equipment
- Properties of Metals and Alloys
- Atomic and Molecular Physics and Spectroscopy