The Growth and Characterization of GaN as a Photodetector.
Semiannual technical rept. 1 Nov 94-30 Apr 95,
CORNELL UNIV ITHACA NY DEPT OF PHYSICS
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The growth of thin films of single crystal h-GaN, h-AlN, and 3C-SiC on Si100 and Si111 with supersonic gas jets has been demonstrated. Among the major findings to date are the following. The growth rates on Si100 are consistently 2-3 times higher than those on Si111 for both GaN and AlN. Surface cleanliness affects significantly the growth rates. The quality of the films was uniformly better if the films were grown by atomic layer epitaxy than with concurrent dosing of the reactants. Kinetic energy of the reactants enhances significantly the growth rates. For kinetic energy higher than about 5 eV, however, the beginning of film degradation begins to appear from x-ray diffraction results. Single crystal h-GaN films have also been grown successfully on 30-SiC initially deposited on Si111, and similarly on AlNSi100. Large area growth of AlN on 4-inch diameter Si100 wafers has been achieved using slit nozzle jets and a rotating substrate. jg p.1
- Inorganic Chemistry
- Optical Detection and Detectors
- Atomic and Molecular Physics and Spectroscopy