Accession Number:

ADA297251

Title:

Investigation of Novel Devices in Wide Bandgap Semiconductors.

Descriptive Note:

Final rept. 1 May 92-30 Apr 94,

Corporate Author:

PURDUE UNIV LAFAYETTE IN DEPT OF ELECTRICAL ENGINEERING

Report Date:

1995-07-25

Pagination or Media Count:

156.0

Abstract:

Silicon carbide is a wide bandgap semiconductor that is well suited for high power, high temperature electronic devices due to its remarkable electronic and thermal properties. Photosensitive devices in the 6H polytype of SiC have also been demonstrated, showing high sensitivity in ultraviolet wavelengths near 270 nm. Furthermore, the native oxide on SiC is silicon dioxide, meaning that SiC can be thermally oxidized to form a high quality gate dielectric, making metal-oxide-semiconductor MOS devices possible. These qualities make silicon carbide ideal for constructing UV sensitive CCD imagers. This work investigates the feasibility for developing imagers in SiC through the fabrication and demonstration of a buried channel CCD linear shift array. jg p.5

Subject Categories:

  • Electrical and Electronic Equipment
  • Inorganic Chemistry
  • Electricity and Magnetism
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE