Accession Number:

ADA295939

Title:

Complementary 2-D MESFET for Low Power Electronics. Phase 1.

Descriptive Note:

Interim rept. no 3,

Corporate Author:

ADVANCED DEVICE TECHNOLOGIES INC CHARLOTTESVILLE VA

Personal Author(s):

• Peatman, William C.

Report Date:

1995-06-28

Pagination or Media Count:

4.0

Abstract:

As detailed in the Phase I proposal, the project has four major tasks. These are 1 assessment of the p-channel 2-D MESFET device fabrication, 2 development of a p-channel 2-D MESFET model and implementation of the model into AIM-SPICE, 3 circuit simulations of complementary 2-D MESFET circuits using AIM-SPICE and comparison with conventional circuits, and, 4 analysis of manufacturability and technology insertion issues. This report summarizes progress in each task area through 28 JUN 95.

Descriptors:

• *FIELD EFFECT TRANSISTORS
• *SEMICONDUCTORS
• COMPUTER PROGRAMS
• LOW POWER
• TWO DIMENSIONAL
• GALLIUM ARSENIDES
• ALUMINUM GALLIUM ARSENIDES
• INDIUM ALLOYS
• CIRCUITS
• SCHOTTKY BARRIER DEVICES
• P TYPE SEMICONDUCTORS

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE