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Accession Number:
ADA295693
Title:
International Conference on Indium Phosphide and Related Materials (7th) Held in Sapporo, Hokkaido, Japan on May 9 - 13, 1995.
Descriptive Note:
Final rept. 1 May-30 Jun 95,
Corporate Author:
INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS INC PISCATAWAY NJ
Report Date:
1995-06-30
Pagination or Media Count:
885.0
Abstract:
Optical Networks Towards the 21 Century and the Role of Partial contents InP-Based Devices Status and Promise of InP Electronics Leading-Edge Optoelectronic Device Production Using Two-Inch Technology High Temperature Operation of AlGalnAsInP Lasers MOCVD Growth and Characterization of Tensile-Strained GaxIn1-xAsyP1-y Quantum Wells for Low Threshold Lasers Emitting at 1 .3 micrometers CW Operation of a 1 .3 micrometers Strained Quantum Well Laser on a Graded InGaAs Buffer with a GaAs Substrate Four-Wavelength DBR Laser Array with Waveguide-Couplers Fabricated Using Selective MOVPE Growth Effect of GaPmInPm Short Period Binary Superlattice Period on Quantum Wire Formation Strain Induced Lateral Layer Ordering in GaInPAlInP Multi-Quantum-Wire Lasers Crystal Growth Preparation of Homogeneous InP Substrates by VGF-Growth and Wafer Annealing Effect of Annealing Conditions on the Uniformity of Undoped Semi-Insulating InP Iron Segregation in LEC InP Crystals Multicomponent Zone Melting Growth of Ternary InGaAs Bulk Crystal. jg
Distribution Statement:
APPROVED FOR PUBLIC RELEASE