Accession Number:

ADA295693

Title:

International Conference on Indium Phosphide and Related Materials (7th) Held in Sapporo, Hokkaido, Japan on May 9 - 13, 1995.

Descriptive Note:

Final rept. 1 May-30 Jun 95,

Corporate Author:

INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS INC PISCATAWAY NJ

Personal Author(s):

Report Date:

1995-06-30

Pagination or Media Count:

885.0

Abstract:

Optical Networks Towards the 21 Century and the Role of Partial contents InP-Based Devices Status and Promise of InP Electronics Leading-Edge Optoelectronic Device Production Using Two-Inch Technology High Temperature Operation of AlGalnAsInP Lasers MOCVD Growth and Characterization of Tensile-Strained GaxIn1-xAsyP1-y Quantum Wells for Low Threshold Lasers Emitting at 1 .3 micrometers CW Operation of a 1 .3 micrometers Strained Quantum Well Laser on a Graded InGaAs Buffer with a GaAs Substrate Four-Wavelength DBR Laser Array with Waveguide-Couplers Fabricated Using Selective MOVPE Growth Effect of GaPmInPm Short Period Binary Superlattice Period on Quantum Wire Formation Strain Induced Lateral Layer Ordering in GaInPAlInP Multi-Quantum-Wire Lasers Crystal Growth Preparation of Homogeneous InP Substrates by VGF-Growth and Wafer Annealing Effect of Annealing Conditions on the Uniformity of Undoped Semi-Insulating InP Iron Segregation in LEC InP Crystals Multicomponent Zone Melting Growth of Ternary InGaAs Bulk Crystal. jg

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Electricity and Magnetism
  • Optics
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE