Accession Number:

ADA295668

Title:

Low Temperature Deposition and Characterization of N- and P-Type Silicon Carbide Thin Films and Associated Ohmic and Schottky Contacts.

Descriptive Note:

Semiannual technical rept. 1 Jan-30 Jun 95,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF PHYSICS

Personal Author(s):

• Davis, R. F.
• Nemanich, R. J.
• Aboelfotoh, O
• Barnak, J. P.
• Benjamin, M. C.

Report Date:

1995-06-01

Pagination or Media Count:

32.0

Abstract:

Monocrystalline Beta3C-SiC films were grown on alpha 6H-SiC0001 substrates using gas-source MBE, silane and ethylene precursors and a temperature range of 1050 deg-145O deg C. Cubic 3C-SiC was achieved at all T 1400 deg C 6H-SiC films achieved at T1400 deg C when H2 diluent was present. The surface electronic states of clean 6H-SiC were investigated using ARUPS. Deposition and subsequent evaporation of Si and were used to clean the surface. LEED, AES and XPS showed that essentially all 0 and C contamination was removed ARUPS revealed that all surfaces on the clean 6H-SiC except those terminated by H exhibited a degree of surface resonance surfaces states as a result of dangling bonds. H termination unpinned the surface Fermi level. NiAl contacts with a Ni passivating layers were deposited at room temperature on p-type 6H-SiC 0001 substrates. jg

Descriptors:

• *LOW TEMPERATURE
• *THIN FILMS
• *DEPOSITION
• *SCHOTTKY BARRIER DEVICES
• *SILICON CARBIDES
• METALS
• TEMPERATURE
• PRECURSORS
• SUBSTRATES
• FERMI SURFACES
• ROOM TEMPERATURE
• SURFACES
• ETHYLENE
• SURFACE PROPERTIES
• ELECTRONIC STATES
• RESONANCE
• SILANES
• NICKEL
• EVAPORATION
• CONTAMINATION
• RANGE(EXTREMES)
• ELECTRIC CONTACTS
• ALUMINIDES

Subject Categories:

• Inorganic Chemistry
• Physical Chemistry
• Atomic and Molecular Physics and Spectroscopy
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE