Accession Number:

ADA295668

Title:

Low Temperature Deposition and Characterization of N- and P-Type Silicon Carbide Thin Films and Associated Ohmic and Schottky Contacts.

Descriptive Note:

Semiannual technical rept. 1 Jan-30 Jun 95,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF PHYSICS

Report Date:

1995-06-01

Pagination or Media Count:

32.0

Abstract:

Monocrystalline Beta3C-SiC films were grown on alpha 6H-SiC0001 substrates using gas-source MBE, silane and ethylene precursors and a temperature range of 1050 deg-145O deg C. Cubic 3C-SiC was achieved at all T 1400 deg C 6H-SiC films achieved at T1400 deg C when H2 diluent was present. The surface electronic states of clean 6H-SiC were investigated using ARUPS. Deposition and subsequent evaporation of Si and were used to clean the surface. LEED, AES and XPS showed that essentially all 0 and C contamination was removed ARUPS revealed that all surfaces on the clean 6H-SiC except those terminated by H exhibited a degree of surface resonance surfaces states as a result of dangling bonds. H termination unpinned the surface Fermi level. NiAl contacts with a Ni passivating layers were deposited at room temperature on p-type 6H-SiC 0001 substrates. jg

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE