Accession Number:

ADA295466

Title:

Non-Destructive X-Ray, Optical and Electrical Materials Characterization Techniques for Silicon-on-Insulator (SOI) Technology.

Descriptive Note:

Final rept. 1 Apr 90-30 Sep 93,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

1993-09-30

Pagination or Media Count:

42.0

Abstract:

The properties of the buried Si-SiO2 interface, the concentration of structural defects, and the level of contamination have been monitored nondestructively via their effect on the surface and bulk components of recombination lifetime by a lasermicrowave photoconductance technique. It has been found for single and multiple implantanneal SIMOX material that the bulk recombination lifetime decreases if the annealing alone no implantation, or both implantation and annealing processes are applied. However, a bulk lifetime recovery for multiple implantanneal process is observed after the second and third processing steps. In addition, the superficial layer and Si-SiO2 interface still contain a very high density of electrical defects even after the structural damage removingoxide forming high temperature treatment. This defect density results in a surface recombination velocity on the order of 1000 cms, two or three orders of magnitude more than a surface subjected to annealing alone without implantation, and only one order less than non-annealed, implanted material. MM

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE