Accession Number:

ADA295460

Title:

Novel Hybrid Superconductors/Semiconductor Heterostructures Devices.

Descriptive Note:

Final rept. 1 Dec 91-30 Nov 94,

Corporate Author:

STATE UNIV OF NEW YORK AT STONY BROOK DEPT OF PHYSICS

Personal Author(s):

• Kastalsky, A.
• Gurvitch, M.

Report Date:

1994-11-30

Pagination or Media Count:

19.0

Abstract:

The initial proposal argued a case for a research on a combination of superconducting electrodes films with sophisticated III-V epitaxial semiconductor structures exhibiting quantum 2-D electron effects. The materials envisioned at that time included InGaAsAlSb epitaxial multilayered structures and Nb films. The dual purpose was to study physics at Superconductor - Semiconductor Su-Sm interfaces and to try and create devices of the superconducting FET type with low power dissipation and high transconductance rate of change of the channel current with the applied gate voltage, dIsub CHdVsub G jg p.2

Descriptors:

• *SUPERCONDUCTORS
• *FIELD EFFECT TRANSISTORS
• *SEMICONDUCTORS
• *HYBRID SYSTEMS
• *INDIUM
• LOW POWER
• LAYERS
• TWO DIMENSIONAL
• GALLIUM ARSENIDES
• STRUCTURES
• FILMS
• GATES(CIRCUITS)
• DISSIPATION
• VOLTAGE
• EPITAXIAL GROWTH
• ELECTRONS
• PHYSICS
• ALUMINUM
• ELECTRODES
• NIOBIUM
• GROUP III COMPOUNDS
• GROUP IV COMPOUNDS
• GROUP V COMPOUNDS
• QUANTUM ELECTRONICS
• CHANNELS
• ANTIMONIDES
• TRANSCONDUCTANCE

Subject Categories:

• Inorganic Chemistry
• Physical Chemistry
• Electrical and Electronic Equipment
• Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE