Accession Number:

ADA295420

Title:

Development of Process Technology for the Fabrication of Mesoscopic Devices.

Descriptive Note:

Final technical rept. 1 Jul 92-31 May 95,

Corporate Author:

OREGON GRADUATE INST BEAVERTON

Report Date:

1995-05-30

Pagination or Media Count:

100.0

Abstract:

The development of the processes necessary for fabrication of sub-100nm heteroepitaxial SixG3e1 -x structures in Si 100 substrates is described. The structures are required to be planar and definable by available patterning techniques e.g. X-ray, e-beam, ion beam, or optical lithography. The report describes the investigation of two candidate patterning processes, enhanced ion beam etching, and standard e-beam lift off. The formation of the heteroepitaxial structures, in the form of nano-wires, is carried out using pulsed laser induced epitaxy, an ultra-rapid 100ns epitaxial growth technique driven by a pulsed excimer laser. Development of a novel, high yield cross sectioning process to examine the wire structures was also carried out during the course of this effort. This process used ion beam deposition of a platinum etch mask, followed by an enhanced, localized ion beam etch to define the wire specimen. Results from cross sectional transmission electron beam analysis indicate successful formation of the heteroepitaxial wires with no defects being observed. jg

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Laminates and Composite Materials
  • Crystallography
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE