Accession Number:

ADA295037

Title:

The Growth of Ultrathin Epitaxial Intermetallic Films,

Descriptive Note:

Corporate Author:

MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1994-12-02

Pagination or Media Count:

14.0

Abstract:

FeAl has been grown on psuedomorphic AlAs films on GaAs substrates. The growth was characterized by in situ reflection high energy electron diffraction, transmission electron diffraction, and electron channeling. Procedures for the growth of high quality films were developed and the detects analyzed. It was found that a low temperature nucleation followed by a high temperature anneal and low temperature growth gave strong layer by layer growth. RHEED intensity oscillations were observed for the first time in a metal aluminide system, allowing for precise control over ultrathin films. The first metal aluminides grown using metal organics were prepared. The results indicated that though there were advantages to this procedure, it was necessary to use full chemical beam epitaxy to avoid carbon contamination. The first measurement of critical thickness was made. GaAs was grown on top of FeAl films. The construction of a scanning tunneling microscope was begun. jg

Subject Categories:

  • Solid State Physics
  • Inorganic Chemistry
  • Organic Chemistry
  • Laminates and Composite Materials
  • Crystallography
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE