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Multilayer Optics for Soft X-Rays.

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Final technical rept. 1 Apr 93-30 Sep 94,

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We have shown that high quality Be films may be grown on alpha-A12O3 Si 111 and Ge 111 Consistent with the relative lattice mismatches, films grown on Si 111 are of higher quality than those grown on alpha-A12O3, and those grown on Ge111 are of the highest quality. The epitaxial Be films grown on Ge during this grant period are the best quality Be films that we or anyone else have ever produced. Growth of these high quality films is a significant step toward single crystal heterostructures containing Be. Such Be-containing structures may he useful, not only in EUV optics, but also in IR optics electronic devices, and studies of thin-film superconductivity. We have been successful in growing epitaxial Co-on-Be, and Ge-on-Be, but not in making CoBe or GeBe superlattices. In both cases the problem is related to limitations of our equipment. To pursue this work further would require an upgrade to our MBE apparatus. Our very recent successes with sputter-deposited Y- and B4C-based multilayers show that there is still much to he gained by studying and optimizing the growth of carefully chosen new material pairs. jg

Subject Categories:

  • Optics
  • Inorganic Chemistry
  • Physical Chemistry
  • Crystallography
  • Electricity and Magnetism
  • Nuclear Physics and Elementary Particle Physics

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