Accession Number:

ADA295016

Title:

Heteroepitaxial Materials and Devices of III-V Arsenides and Antimonides by Molecular Beam Epitaxy.

Descriptive Note:

Final technical rept. 1 Jul 91-30 jun 94,

Corporate Author:

COLUMBIA UNIV NEW YORK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1994-08-31

Pagination or Media Count:

14.0

Abstract:

Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells have been demonstrated. Enhancement of normal incidence intervalence subband absorption in GaSb quantum wells coupled to a neighboring InAs has been observed. The orientation dependence of infrared absorption in AlAsA1GaAs x-valley multiple quantum wells grown on GaAs and Si has been studied. InSb films with excellent x-ray rocking curve linewidths have been grown on GaAs and Si by molecular beam epitaxy for infrared detector applications. AlSbAsInAs heterostructure field-effect transistors with high breakdown voltage has been achieved. jg

Subject Categories:

  • Laminates and Composite Materials
  • Inorganic Chemistry
  • Physical Chemistry
  • Optical Detection and Detectors
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE