Accession Number:

ADA295016

Title:

Heteroepitaxial Materials and Devices of III-V Arsenides and Antimonides by Molecular Beam Epitaxy.

Descriptive Note:

Final technical rept. 1 Jul 91-30 jun 94,

Corporate Author:

COLUMBIA UNIV NEW YORK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Wang, Wen I.

Report Date:

1994-08-31

Pagination or Media Count:

14.0

Abstract:

Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells have been demonstrated. Enhancement of normal incidence intervalence subband absorption in GaSb quantum wells coupled to a neighboring InAs has been observed. The orientation dependence of infrared absorption in AlAsA1GaAs x-valley multiple quantum wells grown on GaAs and Si has been studied. InSb films with excellent x-ray rocking curve linewidths have been grown on GaAs and Si by molecular beam epitaxy for infrared detector applications. AlSbAsInAs heterostructure field-effect transistors with high breakdown voltage has been achieved. jg

Descriptors:

• *COMPOSITE MATERIALS
• *EPITAXIAL GROWTH
• *MOLECULAR BEAMS
• *ARSENIDES
• *GROUP III COMPOUNDS
• *GROUP IV COMPOUNDS
• *GROUP V COMPOUNDS
• *ANTIMONIDES
• MATERIALS
• QUANTUM WELLS
• GALLIUM ARSENIDES
• ORIENTATION(DIRECTION)
• VOLTAGE
• FIELD EFFECT TRANSISTORS
• INFRARED DETECTORS
• HETEROGENEITY
• VALENCE
• ALUMINUM ARSENIDES
• ABSORPTION
• INFRARED RADIATION
• PHOTODETECTORS
• INDIUM
• BREAKDOWN(ELECTRONIC THRESHOLD)
• TRANSISTORS
• HIGH VOLTAGE

Subject Categories:

• Laminates and Composite Materials
• Inorganic Chemistry
• Physical Chemistry
• Optical Detection and Detectors
• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE